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 SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB849
*
DESCRIPTION *With TO-3PN package *Complement to type 2SD1110 *Wide area of safe operation APPLICATIONS *For use in low frequency power amplifier applications PINNING
PIN 1 2 3 Base Collector Emitter DESCRIPTION
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS (TC=25 )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -7 -7 80 150 -55~150 UNIT V V V A W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-10mA ;IB=0 IC=-5A ;IB=-0.5A IC=-5A ;IB=-0.5A VCB=-120V; IE=0 VEB=-6V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-0.2A ; VCE=-5V 20 40 340 14 MIN -120 TYP.
2SB849
SYMBOL VCEO(BR) VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE -2 COB fT
MAX
UNIT V
-2.0 -2.0 -50 -50
V V A A
200 pF MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB849
Fig.2 Outline dimensions (unindicated tolerance:0.10mm)
3


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